丝印：BCP5610；Package：SOT223；80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(SAT)

文件：557.35 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BCP5610；Package：SOT223；80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(SAT)

文件：444.71 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BCP5610；Package：SOT223；80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(SAT)

文件：557.35 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BCP5610；Package：SOT223；80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(SAT)

文件：444.71 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BCP5610；Package：SOT223；80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(SAT)

文件：557.35 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BCP5610；Package：SOT223；80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(SAT)

文件：444.71 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BCP5610；Package：SOT223；80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(SAT)

文件：557.35 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BCP5610；Package：SOT223；80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(SAT)

文件：444.71 Kbytes 页数：7 Pages

DIODES

美台半导体

80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(SAT)

文件：444.71 Kbytes 页数：7 Pages

DIODES

美台半导体

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：131.1 Kbytes 页数：7 Pages

DIODES

美台半导体