BCP53-16

PNP medium power transistors

DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplements:BCP54,BCP55andBCP56. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Mediumpower(max.1.3W). APPLICATIONS •Audio,telephonyandautomotiveapplications •Thickandthin-filmcircuits

BCP53-16

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES *SuitableforAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat)

BCP53-16

PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN)

BCP53-16

PNP Silicon AF Transistors

PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN)

BCP53-16

LOW POWER PNP TRANSISTOR

LOWPOWERPNPTRANSISTOR ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTOR ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THENPNCOMPLEMENTARYTYPEISBCP56-16 APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■OUTPUTSTAGEFORAUDIOAMPLIFIER

BCP53-16

80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■High-sideswitches ■MOSFETdrivers ■Amplifiers

BCP53-16

PNP Plastic-Encapsulate Transistors

Features •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability

BCP53-16

80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■High-sideswitches ■MOSFETdrivers ■Amplifiers

BCP53-16

80 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP53-16

PNP Silicon Epitaxial Planar Transistor

Features HighCollectorCurrent LowCollector-emitterSaturationVoltage

BCP53-16

PNP Silicon AF Transistors

BCP53-16

80 V, 1 A PNP medium power transistors

BCP53-16

PNP Silicon AF Transistors

BCP53-16

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-261-4，TO-261AA 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 1A SOT223

BCP53-16-AU

PNP Low Vce(sat) Transistor

Features SiliconPNPepitaxialtype LowVce(sat)-0.4V(max)@Ic/Ib=-500mA/-50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcom

BCP53-16-AU_R2_000A1

PNP Low Vce(sat) Transistor

Features SiliconPNPepitaxialtype LowVce(sat)-0.4V(max)@Ic/Ib=-500mA/-50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcom

BCP53-16H

80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorsinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■HighcollectorcurrentcapabilityICandICM ■Threecurrentgainselections ■Highpowerdissipationcapability ■High-temperatureapplicat

BCP53-16H

80 V, 1 A PNP medium power transistors

Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified

BCP53-16H

80 V, 1 A NPN medium power transistors

Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified

BCP53-16H-Q

80 V, 1 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorsinaSOT223(SC-73)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •High-temperatureapplications