BCP53-10

PNP medium power transistors

DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplements:BCP54,BCP55andBCP56. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Mediumpower(max.1.3W). APPLICATIONS •Audio,telephonyandautomotiveapplications •Thickandthin-filmcircuits

BCP53-10

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES *SuitableforAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat)

BCP53-10

PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN)

BCP53-10

PNP Silicon AF Transistors

PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN)

BCP53-10

PNP Plastic-Encapsulate Transistors

Features •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability

BCP53-10

80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■High-sideswitches ■MOSFETdrivers ■Amplifiers

BCP53-10

80 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP53-10

80 V, 1 A PNP medium power transistors

BCP53-10

PNP Silicon AF Transistors

BCP53-10

PNP Silicon AF Transistors

BCP53-10H

80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorsinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■HighcollectorcurrentcapabilityICandICM ■Threecurrentgainselections ■Highpowerdissipationcapability ■High-temperatureapplicat

BCP53-10H

80 V, 1 A NPN medium power transistors

Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified

BCP53-10H

80 V, 1 A PNP medium power transistors

Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified

BCP53-10H-Q

80 V, 1 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorsinaSOT223(SC-73)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •High-temperatureapplications

BCP53-10T

80 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

BCP53-10T

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability

BCP53-10T1G

PNP Silicon Epitaxial Transistors

ThisPNPSiliconEpitaxialtransistorisdesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223packagewhichisdesignedformediumpowersurfacemountapplications. •HighCurrent •NPNComplementisBCP56 •TheSOT−223Packagecanbesolderedusingwaveorrefl

BCP53-10T1G

PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT

ThisPNPSiliconEpitaxialtransistorisdesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223packagewhichisdesignedformediumpowersurfacemountapplications. •HighCurrent •NPNComplementisBCP56 •TheSOT−223Packagecanbesolderedusingwaveorrefl

BCP53-10T-Q

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

BCP53-10T

80 V, 1 A PNP medium power transistors