BCP53H

Marking：BCP53H；Package：SC-73；80 V, 1 A PNP medium power transistors

Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified

BCP53H-Q

Marking：BCP53H；Package：SOT223；80 V, 1 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorsinaSOT223(SC-73)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •High-temperatureapplications

BCP53T

Marking：BCP53T；Package：SC-73；80 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

BCP54

Marking：BCP54；Package：SOT223；45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

BCP54-10

Marking：BCP54/10；Package：SOT223；45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

BCP54-10-Q

Marking：BCP54/10；Package：SOT223；45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Qualifiedaccording

BCP54-16

Marking：BCP54/16；Package：SOT223；45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

BCP54-16Q

Marking：BCP54/16；Package：SOT223；45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Qualifiedaccording

BCP5416QTA

Marking：BCP5416；Package：SOT223；NPN MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

BCP54-Q

Marking：BCP54；Package：SOT223；45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Qualifiedaccording