BCP52-10

Marking：BCP52/10；Package：SC-73；60 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP52-16

Marking：BCP52/16；Package：SC-73；60 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP52-16

Marking：BCP52-16；Package：SOT223；PNP Silicon Epitaxial Planar Transistor

Features ®HighCollectorCurrent ®LowCollector-emitterSaturationVoltage

BCP52T

Marking：BCP52T；Package：SC-73；60 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

BCP53

Marking：BCP53；Package：SC-73；80 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP53-10

Marking：BCP53/10；Package：SC-73；80 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP53-16

Marking：BCP53/16；Package：SC-73；80 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP53-16

Marking：BCP53-16；Package：SOT223；PNP Silicon Epitaxial Planar Transistor

Features HighCollectorCurrent LowCollector-emitterSaturationVoltage

BCP5316QTA

Marking：BCP5316；Package：SOT223；80V PNP MEDIUM POWER TRANSISTOR IN SOT223

Features BVCEO>-80V IC=-1AHighContinuousCollectorCurrent ICM=-2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(sat)

BCP53H

Marking：BCP53H；Package：SC-73；80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorsinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■HighcollectorcurrentcapabilityICandICM ■Threecurrentgainselections ■Highpowerdissipationcapability ■High-temperatureapplicat