零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SILICONNPNPLANARPOWERTRANSISTORS SiliconNPNPlanarPowerTransistors Features: ●Highreversevoltage ●Powerdissipation17.5W Application:Generalathighsupplyvoltages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
HDMIInterfaceESDProtection | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconNPNtransistorinaTO-220PlasticPackage. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
NPNDSERIESTRANSISTORS | SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司 | SISEMIC | ||
SiliconNPNtransistorinaTO-220PlasticPackage. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
NPNDSERIESTRANSISTORS | SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司 | SISEMIC | ||
SiliconNPNtransistorinaTO-252PlasticPackage. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
NPNDSERIESTRANSISTORS | SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司 | SISEMIC | ||
N-channelenhancementmodeverticalD-MOStransistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
BipolarNPNDeviceinaHermeticallysealedTO3 | SEME-LAB Seme LAB | SEME-LAB | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
HighVoltageFast-SwitchingNPNPowerTransistor DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi | SUNTAC Suntac Electronic Corp. | SUNTAC | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign | TGS Tiger Electronic Co.,Ltd | TGS | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitchmodepowersupplies. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed ·Integratedantiparallelcollector-emitterdiode APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisd | TGS Tiger Electronic Co.,Ltd | TGS | ||
SiliconNPNPowerTransistor EATURES ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed DESCRIPTION ·Designedforuseinlightingapplicationsandlowcost switch-modepowersupplies. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) •LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A •VeryHighSwitchingSpeed APPLICATIONS •Designedforelectronicballastsforfluorescentlighting. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FCS |
23+ |
TO-92 |
78600 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
BlueCreat |
20+ |
NA |
90000 |
全新原装正品/库存充足 |
询价 | ||
MOT/ST/PH |
2339+ |
CAN3 |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
NEC |
CAN |
1696 |
专营CAN铁帽仔 |
询价 | |||
2021+ |
CAN |
6430 |
原装现货/欢迎来电咨询 |
询价 | |||
MPD |
1941+ |
N/A |
1816 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
MPD |
22+ |
NA |
1816 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
JST/日压 |
22+ |
连接器 |
728922 |
代理-优势-原装-正品-现货*期货 |
询价 | ||
JST/日压 |
2420+ |
/ |
420999 |
一级代理,原装正品! |
询价 | ||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
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