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BD128

SILICONNPNPLANARPOWERTRANSISTORS

SiliconNPNPlanarPowerTransistors Features: ●Highreversevoltage ●Powerdissipation17.5W Application:Generalathighsupplyvoltages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

BGF128

HDMIInterfaceESDProtection

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BLD128D

SiliconNPNtransistorinaTO-220PlasticPackage.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

BLD128D

NPNDSERIESTRANSISTORS

SISEMICShenzhen SI Semiconductors Co.,LTD.

深爱半导体深圳深爱半导体股份有限公司

BLD128DA

SiliconNPNtransistorinaTO-220PlasticPackage.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

BLD128DA

NPNDSERIESTRANSISTORS

SISEMICShenzhen SI Semiconductors Co.,LTD.

深爱半导体深圳深爱半导体股份有限公司

BLD128DD

SiliconNPNtransistorinaTO-252PlasticPackage.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

BLDB128D

NPNDSERIESTRANSISTORS

SISEMICShenzhen SI Semiconductors Co.,LTD.

深爱半导体深圳深爱半导体股份有限公司

BSP128

N-channelenhancementmodeverticalD-MOStransistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BU128

BipolarNPNDeviceinaHermeticallysealedTO3

SEME-LAB

Seme LAB

BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BUL128

HighVoltageFast-SwitchingNPNPowerTransistor

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

SUNTAC

Suntac Electronic Corp.

BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign

TGS

Tiger Electronic Co.,Ltd

BUL128

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitchmodepowersupplies.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BUL128D

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed ·Integratedantiparallelcollector-emitterdiode APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BUL128D

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisd

TGS

Tiger Electronic Co.,Ltd

BUL128D

SiliconNPNPowerTransistor

EATURES ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed DESCRIPTION ·Designedforuseinlightingapplicationsandlowcost switch-modepowersupplies.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BUL128DB

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) •LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A •VeryHighSwitchingSpeed APPLICATIONS •Designedforelectronicballastsforfluorescentlighting.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
FCS
23+
TO-92
78600
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
BlueCreat
20+
NA
90000
全新原装正品/库存充足
询价
MOT/ST/PH
2339+
CAN3
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEC
CAN
1696
专营CAN铁帽仔
询价
2021+
CAN
6430
原装现货/欢迎来电咨询
询价
MPD
1941+
N/A
1816
加我qq或微信,了解更多详细信息,体验一站式购物
询价
MPD
22+
NA
1816
加我QQ或微信咨询更多详细信息,
询价
JST/日压
22+
连接器
728922
代理-优势-原装-正品-现货*期货
询价
JST/日压
2420+
/
420999
一级代理,原装正品!
询价
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
询价
更多BC128B/C供应商 更新时间2024-9-25 16:37:00