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BUL128D

Silicon NPN Power Transistor

EATURES ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed DESCRIPTION ·Designed for use in lighting applications and low cost switch-mode power supplies.

文件:267.21 Kbytes 页数:2 Pages

ISC

无锡固电

BUL128D

HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is d

文件:65.58 Kbytes 页数:1 Pages

TGS

BUL128D

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage, high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.

文件:66.76 Kbytes 页数:3 Pages

ISC

无锡固电

BUL128DB

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A • Very High Switching Speed APPLICATIONS • Designed for electronic ballasts for fluorescent lighting.

文件:193.57 Kbytes 页数:2 Pages

ISC

无锡固电

BUL128D-B

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

文件:72.78 Kbytes 页数:7 Pages

STMICROELECTRONICS

意法半导体

BUL128DR7

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting, fl

文件:850.41 Kbytes 页数:6 Pages

FOSHAN

蓝箭电子

BUL128DR8

Silicon NPN transistor in a TO-220F Plastic Package.

Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting,fl

文件:802.63 Kbytes 页数:6 Pages

FOSHAN

蓝箭电子

BUL128D-B

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件:228.24 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

BUL128D-B_05

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件:228.24 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

BUL128D

Power Transistors

Wanli

万立

Wanli

晶体管资料

  • 型号:

    BUL128D

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Di

  • 性质:

    INTEGR_DAMPER_DI

  • 封装形式:

    直插封装

  • 极限工作电压:

    700V

  • 最大电流允许值:

    4A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BUL39D,

  • 最大耗散功率:

    70W

  • 放大倍数:

  • 图片代号:

    B-10

  • vtest:

    700

  • htest:

    999900

  • atest:

    4

  • wtest:

    70

技术参数

  • Ic(max):

    2000

  • BVCBO:

    4000

  • VCEO:

    700

  • BVEBO:

    400

  • hFE(MIN):

    9

  • hFE(MAX):

    8

  • VCE:

    40

  • IC:

    5

  • VCE(sat):

    2000

  • IC(mA):

    0.5

  • IB(mA):

    4000

  • fT:

    1000

  • Package:

    TO-220

供应商型号品牌批号封装库存备注价格
ST
05+
原厂原装
7051
只做全新原装真实现货供应
询价
ST
17+
TO-220
6200
询价
ST
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
询价
ST
22+
TO-220
6000
十年配单,只做原装
询价
ST
26+
SMD1808
86720
全新原装正品价格最实惠 假一赔百
询价
ST/意法半导体
22+
TO-220
25000
只做原装进口现货,专注配单
询价
KI
25+
TO220
880000
明嘉莱只做原装正品现货
询价
ST
23+
SDM/DIP
7300
专注配单,只做原装进口现货
询价
ST
23+
TO-220
7000
询价
ST
25+
TO-TO-220
63660
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多BUL128D供应商 更新时间2026-1-17 10:32:00