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BUL128D

Silicon NPN Power Transistor

EATURES ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed DESCRIPTION ·Designed for use in lighting applications and low cost switch-mode power supplies.

文件:267.21 Kbytes 页数:2 Pages

ISC

无锡固电

BUL128D

HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is d

文件:65.58 Kbytes 页数:1 Pages

TGS

BUL128D

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage, high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.

文件:66.76 Kbytes 页数:3 Pages

ISC

无锡固电

BUL128DB

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A • Very High Switching Speed APPLICATIONS • Designed for electronic ballasts for fluorescent lighting.

文件:193.57 Kbytes 页数:2 Pages

ISC

无锡固电

BUL128D-B

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

文件:72.78 Kbytes 页数:7 Pages

STMICROELECTRONICS

意法半导体

BUL128DR7

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting, fl

文件:850.41 Kbytes 页数:6 Pages

FOSHAN

蓝箭电子

BUL128DR8

Silicon NPN transistor in a TO-220F Plastic Package.

Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting,fl

文件:802.63 Kbytes 页数:6 Pages

FOSHAN

蓝箭电子

BUL128D-B

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件:228.24 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

BUL128D-B_05

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件:228.24 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

BUL128D

Power Transistors

Wanli

万立

Wanli

技术参数

  • Ic(max):

    2000

  • BVCBO:

    4000

  • VCEO:

    700

  • BVEBO:

    400

  • hFE(MIN):

    9

  • hFE(MAX):

    8

  • VCE:

    40

  • IC:

    5

  • VCE(sat):

    2000

  • IC(mA):

    0.5

  • IB(mA):

    4000

  • fT:

    1000

  • Package:

    TO-220

供应商型号品牌批号封装库存备注价格
ST
05+
原厂原装
7051
只做全新原装真实现货供应
询价
ST
17+
TO-220
6200
询价
ST
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
询价
ST
22+
TO-220
6000
十年配单,只做原装
询价
ST/意法半导体
22+
TO-220
25000
只做原装进口现货,专注配单
询价
KI
25+
TO220
880000
明嘉莱只做原装正品现货
询价
ST
23+
SDM/DIP
7300
专注配单,只做原装进口现货
询价
ST
23+
TO-220
7000
询价
ST
25+
TO-TO-220
63660
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
恩XP
24+
SOT-23
9000
公司现货库存,支持实单
询价
更多BUL128D供应商 更新时间2025-10-14 12:03:00