PNP Multi-Chip General Purpose Amplifier

PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 68.

文件：51.82 Kbytes 页数：5 Pages

Fairchild

仙童半导体

PNP Silicon AF Transistor Array

PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see package information

文件：57.79 Kbytes 页数：6 Pages

Infineon

英飞凌

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Double-Transistors • Power dissipation 300 mW • Plastic case SOT-363 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：73.65 Kbytes 页数：2 Pages

Diotec

德欧泰克

PNP Plastic-Encapsulate Transistors 300mW

Features • Halogen free available upon request by adding suffix -HF • Multi-chip Transistor • Ultra-Small Surface Mount Package • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity L

文件：476 Kbytes 页数：5 Pages

MCC

Dual PNP Small Signal Surface Mount Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available BC847S. ● Ultra-small surface mount package. APPLICATIONS ● For Low power amplification and switching.

文件：173.57 Kbytes 页数：4 Pages

BILIN

银河微电

Multi-Chip TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 300 mW(Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ,Tstg: -55℃to +150℃

文件：3.09571 Mbytes 页数：1 Pages

HTSEMI

金誉半导体

DUAL TRANSISTOR (PNPPNP)

DUAL TRANSISTOR (PNP+PNP) FEATURES ● Two transistors in one package ● Reduces number of components and board space ● No mutual interference between the transistors

文件：1.48003 Mbytes 页数：4 Pages

JIANGSU

长电科技

PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package

文件：159.17 Kbytes 页数：6 Pages

SIEMENS

西门子

Power dissipation, plastic case, Weight approx

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 300 mW • Plastic case SOT-363 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：488.12 Kbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Dual PNP Small Signal Surface Mount Transistor

FEATURES © Epitaxial planar die construction. © Complementary NPN type available o Ultra-small surface mount package. APPLICATIONS © For Low power amplification and switching.

文件：1.86088 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子