BC857S

PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

PNPSiliconAFTransistorArray •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedTransistorswithhighmatchinginonepackage

BC857S

PNP Silicon AF Transistor Array

PNPSiliconAFTransistorArrays •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedtransistorwithgoodmatchinginonepackage •BC856S/U,BC857S:Fororientationinreelseepackageinformation

BC857S

Surface mount Si-Epitaxial PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors •Powerdissipation300mW •PlasticcaseSOT-363 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC857S

PNP Multi-Chip General Purpose Amplifier

PNPMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto200mA.SourcedfromProcess68.

BC857S

Multi-Chip Transistor

Features PowerdissipationPCM:0.3W(Tamp.=25°C) CollectorcurrentICM:-0.2A Collector-basevoltageV(BR)CBO:-50V Operating&StoragejunctionTemperatureTj,Tstg:-55°C~+150°C

BC857S

PNP Plastic-Encapsulate Transistors 300mW

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Multi-chipTransistor •Ultra-SmallSurfaceMountPackage •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityL

BC857S

Multi-Chip TRANSISTOR (PNP)

FEATURES PowerdissipationPCM:300mW(Tamb=25℃) CollectorcurrentICM:-200mA Collector-basevoltageV(BR)CBO:-50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

BC857S

Dual PNP Small Signal Surface Mount Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailableBC847S. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●ForLowpoweramplificationandswitching.

BC857S

Marking：3C；Package：SOT-363；PNP Transistors

■Features ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●ForAFinputstagesanddriverapplications

BC857S

Power dissipation, plastic case, Weight approx

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation300mW •PlasticcaseSOT-363 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled