| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
40V N-Channel Rugged Planar MOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementModeMOSFET Featrues •20V/1.2A, RDS(ON)=90mΩ(typ.)@VGS=4.5V RDS(ON)=120mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •SC-70Package •LeadFreeAvailable(RoHSCompliant) | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Featrues •20V/1.2A, RDS(ON)=90mΩ(typ.)@VGS=4.5V RDS(ON)=120mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •SC-70Package •LeadFreeAvailable(RoHSCompliant) | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Featrues •20V/1.2A, RDS(ON)=90mΩ(typ.)@VGS=4.5V RDS(ON)=120mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •SC-70Package •LeadFreeAvailable(RoHSCompliant) | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
HEXFET짰PowerMOSFET | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETp | IRF International Rectifier | IRF | ||
DynamicdV/dTRating | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETp | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETp | IRF International Rectifier | IRF | ||
DynamicdV/dTRating | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETp | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETp | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETp | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETp | IRF International Rectifier | IRF | ||
HEXFET짰PowerMOSFET | IRF International Rectifier | IRF | ||
LowOn-Resistance | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HEXFET짰PowerMOSFET | IRF International Rectifier | IRF |
详细参数
- 型号：
AOT1404
- 功能描述：
MOSFET N CH 40V 220A TO220
- RoHS：
是
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
-
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor In |
24+ |
TO-220 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
AOS |
1921++ |
TO-220 |
33000 |
原厂FSC渠道,代理长期排单! |
询价 | ||
AOS/万代 |
2019+ |
TO220 |
3333 |
原厂渠道 可含税出货 |
询价 | ||
AOS/万代 |
23+ |
TO-220 |
700000 |
公主请下单 柒号只做原装 |
询价 | ||
Sinopower |
1742+ |
TO-220 |
98215 |
只要网上有绝对有货!只做原装正品! |
询价 | ||
AOS |
TO-220 |
20000 |
原装正品 |
询价 | |||
A |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
AOS/万代 |
23+ |
TO-220 |
24190 |
原装正品代理渠道价格优势 |
询价 | ||
AOS/万代 |
21+ |
TO-220 |
12855 |
原装现货假一赔十 |
询价 | ||
AOS |
1809+ |
TO-220 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
相关规格书
更多- AOT14N50
- AOT15B60D
- AOT15S65L
- AOT16N50
- AOT20C60
- AOT20N25L
- AOT20N60L
- AOT20S60L
- AOT22N50L
- AOT2500L
- AOT25S65
- AOT2606L
- AOT260L
- AOT2618L
- AOT264L
- AOT270L
- AOT282L
- AOT284L
- AOT288L
- AOT2910L
- AOT2918L
- AOT296L
- AOT29S50L
- AOT30SAPL
- AOT3N100L
- AOT3N50_10
- AOT3N60_11
- AOT400L
- AOT402L
- AOT404L
- AOT412
- AOT414
- AOT418L
- AOT424L
- AOT426L
- AOT428L
- AOT42S60L
- AOT440
- AOT460_12
- AOT462L
- AOT470
- AOT474
- AOT480L
- AOT4N60
- AOT4S60
相关库存
更多- AOT14N50FD
- AOT15S60L
- AOT1606L
- AOT1N60
- AOT20N25
- AOT20N60
- AOT20S60
- AOT210L
- AOT240L
- AOT254L
- AOT25S65L
- AOT2608L
- AOT2610L
- AOT262L
- AOT266L
- AOT27S60L
- AOT284
- AOT286L
- AOT290L
- AOT2916L
- AOT292
- AOT298L
- AOT2N60
- AOT3N100
- AOT3N50
- AOT3N60
- AOT400
- AOT402
- AOT404
- AOT410L
- AOT412L
- AOT416
- AOT424
- AOT426
- AOT428
- AOT42S60
- AOT430
- AOT460
- AOT462
- AOT466L
- AOT472
- AOT474L
- AOT482L
- AOT4N60_12
- AOT4S60L
