N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOT404 is Pb-free (meets ROHS

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AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOTF404/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. -RoHS Compliant -AOTF404L Halogen Free F

文件：116.85 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 26A@ TC=25℃ • Drain Source Voltage- : VDSS= 105V(Min) • Static Drain-Source On-Resistance : RDS(on) = 28mΩ (Max) • 100 avalanche tested • Minimum Lot-to-L

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ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOTF404/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. -RoHS Compliant -AOTF404L Halogen Free F

文件：116.85 Kbytes 页数：6 Pages

AOSMD

万国半导体