60V N-Channel MOSFET

General Description The AOT462L/AOB462L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Su

文件：445.9 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=35A@ TC=25℃ • Drain Source Voltage- : VDSS=60V(Min) • Static Drain-Source On-Resistance : RDS(on) = 18mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：303.97 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：1.2731 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代