N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4106 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a low side switch in SMPS and general purpose applications. Standard Product AOD4106 is Pb-free (meets ROHS & Sony 259 specifications). AOD4106L is

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AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8.1mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

15 WATT 24V TO 5V/12V/15V ISOLATED DC-DC CONVERTER

文件：179.75 Kbytes 页数：3 Pages

TI

德州仪器

15 WATT 24V TO 5V/12V/15V ISOLATED DC-DC CONVERTER

文件：179.75 Kbytes 页数：3 Pages

TI

德州仪器

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARMARKING DETAIL - MZ

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ZETEX