N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD406 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD406 is Pb-free (meets ROHS & Sony 25

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AOSMD

万国半导体

N-Channel 30-V (D-S) MOSFET

文件：994.11 Kbytes 页数：7 Pages

VBSEMI

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

Current Sense Inductors & Transformers

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TALEMA