isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -18A@ TC=25℃ ·Drain Source Voltage : VDSS= -30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 32mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：341.74 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 30-V (D-S) MOSFET

文件：1.01459 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

文件：139.86 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

P-Channel Enhancement Mode Field Effect Transistor

文件：139.86 Kbytes 页数：4 Pages

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