丝印：ABT540；Package：SOIC；OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：818.44 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ABT540；Package：SOIC；OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：818.44 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ABT540；Package：SOIC；OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：818.44 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ABT540；Package：SOIC；OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：818.44 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ABT540；Package：SOP；OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：818.44 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ABT540；Package：SOP；OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：818.44 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ABT5402A；Package：SOIC；12-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS

Output Ports Have Equivalent 25-W Series Resistors, So No External Resistors Are Required State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：302.09 Kbytes 页数：12 Pages

TI

德州仪器

丝印：ABT5402A；Package：SOIC；12-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS

Output Ports Have Equivalent 25-W Series Resistors, So No External Resistors Are Required State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：302.09 Kbytes 页数：12 Pages

TI

德州仪器

丝印：ABT5402A；Package：SOIC；12-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS

Output Ports Have Equivalent 25-W Series Resistors, So No External Resistors Are Required State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：302.09 Kbytes 页数：12 Pages

TI

德州仪器

丝印：ABT5402A；Package：SOIC；12-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS

Output Ports Have Equivalent 25-W Series Resistors, So No External Resistors Are Required State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：302.09 Kbytes 页数：12 Pages

TI

德州仪器