丝印：ABT620；Package：SOIC；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

文件：240.68 Kbytes 页数：12 Pages

TI

德州仪器

丝印：ABT620；Package：SOIC；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

文件：240.68 Kbytes 页数：12 Pages

TI

德州仪器

丝印：ABT620；Package：SOP；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

文件：240.68 Kbytes 页数：12 Pages

TI

德州仪器

丝印：ABT620；Package：SOP；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

文件：240.68 Kbytes 页数：12 Pages

TI

德州仪器