丝印：ABT823；Package：SOIC；9-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：385.69 Kbytes 页数：16 Pages

TI

德州仪器

丝印：ABT823；Package：SOIC；9-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：385.69 Kbytes 页数：16 Pages

TI

德州仪器

丝印：ABT823；Package：SOIC；9-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：385.69 Kbytes 页数：16 Pages

TI

德州仪器

丝印：ABT823；Package：SOIC；9-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：385.69 Kbytes 页数：16 Pages

TI

德州仪器