丝印：ABT843；Package：SOIC；9-BIT BUS-INTERFACE D-TYPE LATCHES WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：368.8 Kbytes 页数：17 Pages

TI

德州仪器

丝印：ABT843；Package：SOIC；9-BIT BUS-INTERFACE D-TYPE LATCHES WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：368.8 Kbytes 页数：17 Pages

TI

德州仪器

丝印：ABT843；Package：SOIC；9-BIT BUS-INTERFACE D-TYPE LATCHES WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：368.8 Kbytes 页数：17 Pages

TI

德州仪器

丝印：ABT843；Package：SOIC；9-BIT BUS-INTERFACE D-TYPE LATCHES WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：368.8 Kbytes 页数：17 Pages

TI

德州仪器