SN74ABT861DW.B芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SN74ABT861DW	文件：280.67 Kbytes Page：11 Pages	丝印：ABT861；Package：SOIC；10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) High-Impedance State During Power Up and Power Down Latch-Up Performance Exceeds 500 mA Per JED 文件：280.67 Kbytes 页数：11 Pages	TI 德州仪器	TI
SN74ABT861DW.B	文件：280.67 Kbytes Page：11 Pages	丝印：ABT861；Package：SOIC；10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) High-Impedance State During Power Up and Power Down Latch-Up Performance Exceeds 500 mA Per JED 文件：280.67 Kbytes 页数：11 Pages	TI 德州仪器	TI

更多ABT861供应商更新时间2025-9-4 10:36:00