丝印：ABT853；Package：SOIC；8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

文件：756.73 Kbytes 页数：21 Pages

TI

德州仪器

丝印：ABT853；Package：SOIC；8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

文件：756.73 Kbytes 页数：21 Pages

TI

德州仪器

丝印：ABT853；Package：SOIC；8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

文件：756.73 Kbytes 页数：21 Pages

TI

德州仪器

丝印：ABT853；Package：SOIC；8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

文件：756.73 Kbytes 页数：21 Pages

TI

德州仪器