丝印：ABT821A；Package：SOIC；10-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015 Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：343.04 Kbytes 页数：15 Pages

TI

德州仪器

丝印：ABT821A；Package：SOIC；10-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015 Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：343.04 Kbytes 页数：15 Pages

TI

德州仪器

丝印：ABT821A；Package：SOIC；10-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015 Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：343.04 Kbytes 页数：15 Pages

TI

德州仪器

丝印：ABT821A；Package：SOIC；10-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015 Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：343.04 Kbytes 页数：15 Pages

TI

德州仪器