丝印：ABT651；Package：SOIC；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

文件：283.5 Kbytes 页数：14 Pages

TI

德州仪器

丝印：ABT651；Package：SOIC；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

文件：283.5 Kbytes 页数：14 Pages

TI

德州仪器

丝印：ABT651；Package：SOIC；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

文件：283.5 Kbytes 页数：14 Pages

TI

德州仪器

丝印：ABT651；Package：SOIC；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

文件：283.5 Kbytes 页数：14 Pages

TI

德州仪器