SN74ABT5402ADWR.B中文资料德州仪器数据手册PDF规格书

Output Ports Have Equivalent 25-W Series

Resistors, So No External Resistors Are

Required

State-of-the-Art EPIC-IIBE BiCMOS Design

Significantly Reduces Power Dissipation

Latch-Up Performance Exceeds 500 mA Per

JEDEC Standard JESD-17

Typical VOLP (Output Ground Bounce) < 1 V

at VCC = 5 V, TA = 25°C

Typical VOLV (Output Undershoot) < 0.5 V at

VCC = 5 V, TA = 25°C

Package Options Include Plastic

Small-Outline (DW) Package and Ceramic

Chip Carriers (FK) and DIPs (JT)

description

These 12-bit buffers and line drivers are designed

specifically to improve both the performance and

density of 3-state memory address drivers, clock

drivers, and bus-oriented receivers and

transmitters.

The 3-state control gate is a 2-input AND gate with

active-low inputs so that if either output-enable

(OE1 or OE2) input is high, all 12 outputs are in the

high-impedance state.

The outputs, which are designed to source or sink

up to 12 mA, include equivalent 25-W series

resistors to reduce overshoot and undershoot.

To ensure the high-impedance state during power

up or power down, OE should be tied to VCC

through a pullup resistor; the minimum value of

the resistor is determined by the current-sinking

capability of the driver.

The SN54ABT5402A is characterized for operation over the full military temperature range of –55°C to 125°C.

The SN74ABT5402A is characterized for operation from –40°C to 85°C.