丝印：ABT543A；Package：SOIC；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Typical VOLP (Output Ground Bounce)

文件：543.06 Kbytes 页数：20 Pages

TI

德州仪器

丝印：ABT543A；Package：SOIC；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Typical VOLP (Output Ground Bounce)

文件：543.06 Kbytes 页数：20 Pages

TI

德州仪器

丝印：ABT543A；Package：SOIC；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Typical VOLP (Output Ground Bounce)

文件：543.06 Kbytes 页数：20 Pages

TI

德州仪器

丝印：ABT543A；Package：SOIC；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Typical VOLP (Output Ground Bounce)

文件：543.06 Kbytes 页数：20 Pages

TI

德州仪器

丝印：ABT543A；Package：SOIC；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Typical VOLP (Output Ground Bounce)

文件：543.06 Kbytes 页数：20 Pages

TI

德州仪器