SN74ABT540NSR集成电路（IC）的缓冲器驱动器接收器收发器规格书PDF中文资料

SN74ABT540NSR属于集成电路（IC）的缓冲器驱动器接收器收发器。由德州仪器制造生产的SN74ABT540NSR缓冲器，驱动器，接收器，收发器逻辑缓冲器、驱动器、接收器和收发器允许隔离对某个电路的逻辑信号的访问，以用于另一电路。缓冲器将其输入信号（不变或反相）传递到其输出，并可能用于清除弱信号或驱动负载。在布尔逻辑仿真器中，缓冲器主要用于增加传播延迟。逻辑接收器和收发器允许在数据总线之间进行隔离通信。

State-of-the-Art EPIC-IIBE BiCMOS Design

Significantly Reduces Power Dissipation

ESD Protection Exceeds 2000 V Per

MIL-STD-883, Method 3015; Exceeds 200 V

Using Machine Model (C = 200 pF, R = 0)

Latch-Up Performance Exceeds 500 mA Per

JEDEC Standard JESD-17

Typical VOLP (Output Ground Bounce) < 1 V

at VCC = 5 V, TA = 25°C

High-Drive Outputs (–32-mA IOH, 64-mA IOL)

Package Options Include Plastic

Small-Outline (DW), Shrink Small-Outline

(DB), and Thin Shrink Small-Outline (PW)

Packages, Ceramic Chip Carriers (FK),

Plastic (N) and Ceramic (J) DIPs, and

Ceramic Flat (W) Package

description

The ’ABT540 octal buffers and line drivers are

ideal for driving bus lines or buffer memory

address registers. The devices feature inputs and

outputs on opposite sides of the package that

facilitate printed circuit board layout.

The 3-state control gate is a 2-input AND gate with

active-low inputs so that if either output-enable

(OE1 or OE2) input is high, all corresponding

outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup

resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT540 is characterized for operation over the full military temperature range of –55°C to 125°C. The

SN74ABT540 is characterized for operation from –40°C to 85°C.