丝印：6R0；SMD POWER INDUCTOR-RoHS

文件：175.55 Kbytes 页数：3 Pages

FENGJUI

峰瑞科技

丝印：6R0；SMD POWER INDUCTOR-RoHS

文件：210.8 Kbytes 页数：3 Pages

FENGJUI

峰瑞科技

丝印：6R0；SMD POWER INDUCTOR-RoHS

文件：149.95 Kbytes 页数：3 Pages

FENGJUI

峰瑞科技

丝印：6R099P6；Package：PG-TO220FullPAK；600V CoolMOS??P6 Power Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

文件：2.27598 Mbytes 页数：18 Pages

Infineon

英飞凌

丝印：6R099P；Package：PG-TO262；High peak current capability

Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant

文件：551.62 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：6R099P6；Package：PG-TO220；600V CoolMOS??P6 Power Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

文件：2.27598 Mbytes 页数：18 Pages

Infineon

英飞凌

丝印：6R045；Package：PG-TO247-3-1；CoolMOS Power Transistor

Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies

文件：355 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：6R099P6；Package：PG-TO247；600V CoolMOS??P6 Power Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

文件：2.27598 Mbytes 页数：18 Pages

Infineon

英飞凌

丝印：6R045；Package：PG-TO247-3-1；CoolMOS Power Transistor

文件：584.61 Kbytes 页数：11 Pages

Infineon

英飞凌

WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

文件：718.61 Kbytes 页数：4 Pages

AITSEMI

创瑞科技