丝印：6R045；Package：PG-TO247-3-1；CoolMOS Power Transistor

Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies

文件：355 Kbytes 页数：10 Pages

INFINEON

英飞凌

CoolMOSTM Power Transistor

Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CS CoolMOS is specially designed for: • Hard switching SMPS topologies

文件：365.43 Kbytes 页数：10 Pages

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英飞凌

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤45mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.89 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：6R045；Package：PG-TO247-3-1；CoolMOS Power Transistor

文件：584.61 Kbytes 页数：11 Pages

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英飞凌

CoolMOS Power Transistor

Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications

文件：477.86 Kbytes 页数：11 Pages

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英飞凌

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 60A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.045Ω(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

文件：376.03 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS Power Transistor

文件：584.61 Kbytes 页数：11 Pages

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英飞凌

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

CoolMOS™ CP 是英飞凌第五个 CoolMOS™ 系列产品，专门设计用于 ATX、笔记本适配器 PDP 和 LCD 电视的软硬开关拓扑、CCM PFC 以及 PWM。\n   • 极低的 R on x Q g 品质因数\n• 极低的栅极电荷\n• 极端 dv/dt 额定值\n• 极低的 R DS(on)，超低的栅极电压，极快速开关\n• V th 为 3 V，g fs 极高，内部 R g 非常低\n• 高电流能力\n• 显著减少传导和开关损耗\n• 高功率密度和效率，实现更高功率转换系统\n• 出色性价/性能比\n\n优势:;

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20V-650V汽车级MOSFET

• Worldwide best RDS(on) in TO-247 package\n • Ultra low gate charge\n • Extreme dv/dt rated\n • High peak current capability\n • Automotive AEC Q101 qualified\n • Green package (RoHS compliant)\n\n优势:;

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英飞凌