IPTA60R180CM8

Marking：60R180C8；Package：PG-LHSOF-4；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

IPW60R016CM8

Marking：60R016C8；Package：PG-TO247-3；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

IPW60R024CFD7

Marking：60R024F7；Package：PG-TO247-3；600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages Benefits •Excellenthardcommutationrugg

IPW60R024CM8

Marking：60R024C8；Package：PG-TO247-3；MOSFET 600V CoolMOS™ CM8 Power Transistor

Features •Best‑In‑ClassSJMosfetPerformance •Addressbroadhardandsoftswitchingapplicationswithoutstanding commutationruggedness •IntegratedfastbodydiodeandESDprotection •.XTinterconnectiontechnologyforbest‑in‑classthermalperformance Benefits •Providesthebestp

IPW60R037CM8

Marking：60R037C8；Package：PG-TO247-3；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

IPW60R037CSFD

Marking：60R037CS；Package：PG-TO247-3；600V CoolMOSª CSFD Power Transistor

Features •Fastbodydiode •Industry-leadingreverserecoverycharge(Qrr) •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Costoptimization

IPW60R055CFD7

Marking：60R055F7；Package：PG-TO247-3；600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

IPW60R055CM8

Marking：60R055C8；Package：PG-TO247-3；MOSFET 600V CoolMOS™ CM8 Power Transistor

Features •Best‑In‑ClassSJMosfetPerformance •Addressbroadhardandsoftswitchingapplicationswithoutstanding commutationruggedness •IntegratedfastbodydiodeandESDprotection •.XTinterconnectiontechnologyforbest‑in‑classthermalperformance Benefits •Providesthebestp

IPW60R070CFD7

Marking：60R070F7；Package：PG-TO247-3；600V CoolMOS짧 CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

IPW60R090CFD7

Marking：60R090F7；Package：PG-TO247-3；600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages