60R060F7

型号：IPL60R060CFD7；Package：PG-VSON-4；600V CoolMOS짧 CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

60R225F7

型号：IPL60R225CFD7；Package：PG-VSON-4；MOSFET 600V CoolMOS짧 CFD7 Power Transistor

MOSFET 600VCoolMOSªCFD7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe successortotheCoolMOS™CFD2seriesandisanopti

60R016C8

型号：IPP60R016CM8；Package：PG-TO220-3；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

60R022S7

型号：IPP60R022S7；Package：PG-TO220-3；600V CoolMOSª SJ S7 Power Device

Features •CoolMOS™S7technologyenables22mWRDS(on)inthesmallestfootprint •Optimizedpriceperformanceinlowfrequencyswitchingapplications •Highpulsecurrentcapability •TO220packagewithtotalPb-freedieattach

60R037C8

型号：IPP60R037CM8；Package：PG-TO220-3；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

60R040S7

型号：IPP60R040S7；Package：PG-TO220-3；600V CoolMOSª SJ S7 Power Device

Features •CoolMOS™S7technologyenables40mWRDS(on)inthesmallestfootprint •Optimizedpriceperformanceinlowfrequencyswitchingapplications •Highpulsecurrentcapability •TO220packagewithtotalPb-freedieattach

60R065S7

型号：IPP60R065S7；Package：PG-TO220-3；600V CoolMOSª SJ S7 Power Device

Features •CoolMOS™S7technologyenables65mWRDS(on)inthesmallestfootprint •Optimizedpriceperformanceinlowfrequencyswitchingapplications •Highpulsecurrentcapability •TO220packagewithtotalPb-freedieattach Benefits •Minimizedconductionlosses(eliminate/reducehe

60R105F7

型号：IPP60R105CFD7；Package：PG-TO220-3；MOSFET 600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

60R145F7

型号：IPP60R145CFD7；Package：PG-TO220-3；600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

60R160P7

型号：IPP60R160P7；Package：PG-TO220-3；600V CoolMOSª P7 Power Transistor

Features •Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness •Significantreductionofswitchingandconductionlosses •ExcellentESDrobustness>2kV(HBM)forallproducts •BetterRDS(on)/packageproductscomparedtocompetitionenabledbya