IPP60R180CM8

Marking：60R180C8；Package：PG-TO220-3；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

IPP60R360P7

Marking：60R360P7；Package：PG-TO220-3；600V CoolMOS짧 P7 Power Transistor

600VCoolMOSªP7PowerTransistor Applications   PFC,hardswitchingPWMandresonantswitchingpowerstages.e.g.PC   Silverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom&UPS

IPQC60R010S7

Marking：60R010S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7 Power Device

Features •CoolMOS™S7technologyenables10mWRDS(on)inthesmallestfootprint •Optimizedpriceperformanceinlowfrequencyswitchingapplications •Highpulsecurrentcapability •KelvinSourcepinimprovesswitchingperformanceathighcurrent •QDPAKbottomsidecoolingpackageisMSL1

IPQC60R017S7

Marking：60R017S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7 Power Device

Features •CoolMOS™S7technologyenables17mWRDS(on)inthesmallestfootprint •Optimizedpriceperformanceinlowfrequencyswitchingapplications •Highpulsecurrentcapability •KelvinSourcepinimprovesswitchingperformanceathighcurrent •QDPAKbottomsidecoolingpackageisMSL1

IPQC60R040S7

Marking：60R040S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7 Power Device

Features •CoolMOS™S7technologyenables40mWRDS(on)inthesmallestfootprint •Optimizedpriceperformanceinlowfrequencyswitchingapplications •Highpulsecurrentcapability •KelvinSourcepinimprovesswitchingperformanceathighcurrent •QDPAKbottomsidecoolingpackageisMSL1

IPT60R016CM8

Marking：60R016C8；Package：PG-HSOF-8；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

IPT60R022S7

Marking：60R022S7；Package：PG-HSOF-8；600V CoolMOS짧 SJ S7 Power Device

MOSFET600VCoolMOS™SJS7PowerDevice IPT60R022S7enablesthebestpriceperformanceforlowfrequencyswitchingapplications.CoolMOS™S7boaststhelowestRdsonvaluesforaHVSJMOSFET,withdistinctiveincreaseofenergyefficiency. CoolMOS™S7isoptimizedfor“staticswitching”andhigh

IPT60R037CM8

Marking：60R037C8；Package：PG-HSOF-8；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

IPT60R099CM8

Marking：60R099C8；Package：PG-HSOF-8；MOSFET 600V CoolMOS™ CM8 Power Transistor

Features •Best‑In‑ClassSJMosfetPerformance •Addressbroadhardandsoftswitchingapplicationswithoutstanding commutationruggedness •IntegratedfastbodydiodeandESDprotection •.XTinterconnectiontechnologyforbest‑in‑classthermalperformance Benefits •Providesthebestp

IPT60R180CM8

Marking：60R180C8；Package：PG-HSOF-8；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug