丝印：60R；Package：5-PinSOT23；1MHz, 80關A, RRIO, Op Amps

文件：944.57 Kbytes 页数：17 Pages

3PEAK

思瑞浦

丝印：60R007C8；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.2277 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R015F7；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages Benefits • Excellent hard commutation rugg

文件：1.25691 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R016C8；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.23931 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R017S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 17mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK (PG-HDSOP-22-1) offers top side coo

文件：1.2665 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R020F7；Package：PG-HDSOP-22；600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages Potential applications Suitable for Soft S

文件：1.28851 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R022S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 22mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK (PG-HDSOP-22-1) offers top side coo

文件：1.03865 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R024C8；Package：PG-HDSOP-22；MOSFET 600V CoolMOS™ CM8 Power Transistor

Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best‑in‑class thermal performance Benefits • Provides the best p

文件：1.21517 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：60R025F7；Package：PG-HDSOP-22；600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages Potential applications Suitable for Soft S

文件：1.25513 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R035F7；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.26289 Mbytes 页数：14 Pages

Infineon

英飞凌