丝印：60R；Package：5-PinSOT23；1MHz, 80關A, RRIO, Op Amps

文件：944.57 Kbytes 页数：17 Pages

3PEAK

思瑞浦

丝印：60R190D1；Package：PG-LSON-8-1；600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：500.23 Kbytes 页数：17 Pages

Infineon

英飞凌

丝印：60R190D1；Package：PG-TSON-8-6；600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：498.44 Kbytes 页数：16 Pages

Infineon

英飞凌

丝印：60R260D；Package：PG-TSON-8-7；600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：516.08 Kbytes 页数：16 Pages

Infineon

英飞凌

丝印：60R340D；Package：PG-TSON-8-7；600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：520.62 Kbytes 页数：16 Pages

Infineon

英飞凌

丝印：60R042D1；Package：PG-DSO-20-85；600V CoolGaN™ enhancement-mode Power Transistor

Features • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD

文件：573.53 Kbytes 页数：16 Pages

Infineon

英飞凌

丝印：60R042D1；Package：PG-DSO-20-87；600V CoolGaN™ enhancement-mode Power Transistor

Features • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD

文件：638.14 Kbytes 页数：16 Pages

Infineon

英飞凌

丝印：60R070D1；Package：PG-DSO-20-87；600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：536.93 Kbytes 页数：17 Pages

Infineon

英飞凌

丝印：60R042D1；Package：PG-HSOF-8-3；600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：553.39 Kbytes 页数：16 Pages

Infineon

英飞凌

丝印：60R190D1；Package：PG-HSOF-8-3；600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：544.95 Kbytes 页数：16 Pages

Infineon

英飞凌