丝印：6003M；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON)

文件：257.26 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6003X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：642.2 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6003XM；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XM uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：675.83 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6003XY；Package：SOT-23-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：711.16 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6005AN；Package：SOT23-6L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6005AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)

文件：711.65 Kbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：6007；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =7A RDS(ON)

文件：431.63 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6003；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description The uses advanced trench techno logy to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. Thi s device is suitable for use as a Battery protection or in other Switching application. NVR5198NL General Features VDS = 60V ID =3A RDS(ON)

文件：1.9281 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：600A；Transient Voltage Suppressors

Glass Passivated Junction Transient Voltage Suppressor VOLTAGE-6.8 TO 550 Volts 400 Watt Peak Pulse Power Features • For surface mounted applications in order to optimize board space • Glass passivated junction • Built-in strain relief • Excellent clamping capability • Lo

文件：2.72233 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：600A；Transient Voltage Suppressors

Features • For surface mounted applications in order to optimize board space • Glass passivated junction • Built-in strain relief • Excellent clamping capability • Low profile package • Low inductance • Excellent clamping capability • Fast response time: typically less than 1.0 ps from 0 v

文件：2.13257 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：6003；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description The uses advanced trench techno logy to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. PMV37ENEA General Features VDS = 60V ID =3A RDS(ON)

文件：1.92811 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子