丝印：6003；Package：SOT23-3L；N -Channel Enhancement Mode Power MOSFET

Features BV > 60 V Ptot

文件：176.32 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：6005；Package：SOP-8；P-Channel Enhancement Mode MOSFET

Features Surface-mounted package Low gate charge

文件：175.69 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：6005AR；Package：SOT-223-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS=60V,ID=5A RDS(ON)

文件：289.42 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：6003；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description The SQ2308CES uses advanced trench technolo gy to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. Thi s device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =3A RDS(ON)

文件：1.92812 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：6004Q；Package：WQFN；TPS389006/08-Q1,TPS389R0-Q1 Multichannel Overvoltage and Undervoltage I2C Programmable Voltage Supervisor and Monitor

1 Features • ASIL-D Functional Safety-Compliant – Development target for Functional Safety applications – Documentation to aid ISO 26262 system design – Systematic capability up to ASIL D – Hardware capability up to ASIL D • AEC-Q100 qualified with the following results: – Device temperatu

文件：4.84694 Mbytes 页数：146 Pages

TI

德州仪器

丝印：6007R；Package：WQFN；TPS389006 Multichannel Overvoltage and Undervoltage I2C Programmable Voltage Supervisor and Monitor

1 Features • Functional Safety-Compliant – Development target for Functional Safety applications – Documentation to aid IEC 61508 system design – Systematic capability up to SIL 3 – Hardware capability up to SIL 3 • Monitor state-of-the art SOCs – ±6 mV threshold accuracy (–40°C to +125°C)

文件：3.86775 Mbytes 页数：120 Pages

TI

德州仪器

丝印：6002I；Package：SO8；Low-power, 1 MHz, rail-to-rail, 5 V cost-effective op amp

Features • Gain bandwidth product 1 MHz, unity gain stable • Rail-to-rail input and output • Wide supply voltage range: 1.8 V to 5.5 V • Input offset voltage: 4.5 mV • Low input bias current: 1 pA typ. • Extended temperature range: -40 °C to +125 °C • Automotive grade versions available

文件：978.17 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：6002Y；Package：SO8；Low-power, 1 MHz, rail-to-rail, 5 V cost-effective op amp

Features • Gain bandwidth product 1 MHz, unity gain stable • Rail-to-rail input and output • Wide supply voltage range: 1.8 V to 5.5 V • Input offset voltage: 4.5 mV • Low input bias current: 1 pA typ. • Extended temperature range: -40 °C to +125 °C • Automotive grade versions available

文件：978.17 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：6004I；Package：TSSOP-14；Low-power, 1 MHz, rail-to-rail, 5 V cost-effective op amp

Features • Gain bandwidth product 1 MHz, unity gain stable • Rail-to-rail input and output • Wide supply voltage range: 1.8 V to 5.5 V • Input offset voltage: 4.5 mV • Low input bias current: 1 pA typ. • Extended temperature range: -40 °C to +125 °C • Automotive grade versions available

文件：978.17 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：6004Y；Package：TSSOP-14；Low-power, 1 MHz, rail-to-rail, 5 V cost-effective op amp

Features • Gain bandwidth product 1 MHz, unity gain stable • Rail-to-rail input and output • Wide supply voltage range: 1.8 V to 5.5 V • Input offset voltage: 4.5 mV • Low input bias current: 1 pA typ. • Extended temperature range: -40 °C to +125 °C • Automotive grade versions available

文件：978.17 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体