1550 nm Externally Modulated Transmitter

文件：595.42 Kbytes 页数：7 Pages

EMCORE

Emcore Corporation

1550 nm Externally Modulated Transmitter

文件：595.42 Kbytes 页数：7 Pages

EMCORE

Emcore Corporation

1550 nm Externally Modulated Transmitter

文件：595.42 Kbytes 页数：7 Pages

EMCORE

Emcore Corporation

1550 nm Externally Modulated Transmitter

文件：595.42 Kbytes 页数：7 Pages

EMCORE

Emcore Corporation

丝印：600A；Transient Voltage Suppressors

Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 1500 W Features ● Glass passivated chip ● 1500 W peak pulse power capability with a 10/1000 ȝs waveform, repetitive rate (duty cycle):0.01 ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fast respo

文件：2.20141 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：600A；Package：SMC；Transient Voltage Suppressors

Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 1500 W Features ● Glass passivated chip ● 1500 W peak pulse power capability with a 10/1000 ȝs waveform, repetitive rate (duty cycle):0.01 ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fast respo

文件：2.20141 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：6004B01L；Package：TSSOP；62.5MHz to 250MHz, 1:4 LVCMOS/ LVTTL Zero Delay Clock Buffer

FEATURES • Four LVCMOS/LVTTL outputs, 7Ω typical output impedance • Single LVCMOS/LVTTL clock input • CLK accepts the following input levels: LVCMOS or LVTTL • Output frequency range: 62.5MHz to 250MHz • Input frequency range: 62.5MHz to 250MHz • External feedback for “zero delay” clock rege

文件：155.56 Kbytes 页数：12 Pages

RENESAS

瑞萨

丝印：6004B01L；Package：TSSOP；62.5MHz to 250MHz, 1:4 LVCMOS/ LVTTL Zero Delay Clock Buffer

FEATURES • Four LVCMOS/LVTTL outputs, 7Ω typical output impedance • Single LVCMOS/LVTTL clock input • CLK accepts the following input levels: LVCMOS or LVTTL • Output frequency range: 62.5MHz to 250MHz • Input frequency range: 62.5MHz to 250MHz • External feedback for “zero delay” clock rege

文件：155.56 Kbytes 页数：12 Pages

RENESAS

瑞萨

丝印：6003；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description The uses advanced trench technolo gy to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. DMN6075SQ General Features VDS = 60V ID =3A RDS(ON)

文件：1.92812 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：6003X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：639.44 Kbytes 页数：7 Pages

NCEPOWER

新洁能