丝印：40D；Package：SMAF；Surface mount transient voltage suppressor power 400 watts

FEATURES For surface mounted applications in order to optimize board space. Low profile package Glass passivated junction Low inductance Plastic package has Underwriters Laboratory Flammability

文件：1.10473 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：40DP06NM；Package：PG-TO252-3；MOSFET OptiMOSTM Power Transistor, -60 V

Features • P-Channel • Very low on-resistance RDS(on) • 100 avalanche tested • Normal Level • Enhancement mode • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：890.35 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：40DN3LLH5；Package：PowerFLAT5x6；Dual N-channel 30 V, 0.016 Ω typ., 11 A STripFET™ V Power MOSFET in a PowerFLAT™ 5x6 double island

Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. Features ■ RDS(on) * Qg industry benchmark ■

文件：882.56 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Radial Lead Varistor (MOV)

Features Wide operating voltage (V1mA) range from 200V to 1800V(DC) Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping ratio and no following-on current Meets MSL level 1, per J-STD-020 Applicable Transistor, Diode, IC, Thyristor or Triac se

文件：2.23336 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

Radial Lead Varistor (MOV)

Features Wide operating voltage (V1mA) range from 200V to 1800V(DC) Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping ratio and no following-on current Meets MSL level 1, per J-STD-020 Applicable Transistor, Diode, IC, Thyristor or Triac se

文件：2.23336 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

Radial Lead Varistor (MOV)

Features Wide operating voltage (V1mA) range from 200V to 1800V(DC) Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping ratio and no following-on current Meets MSL level 1, per J-STD-020 Applicable Transistor, Diode, IC, Thyristor or Triac se

文件：2.23336 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

Radial Lead Varistor (MOV)

Features Wide operating voltage (V1mA) range from 200V to 1800V(DC) Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping ratio and no following-on current Meets MSL level 1, per J-STD-020 Applicable Transistor, Diode, IC, Thyristor or Triac se

文件：2.23336 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

Radial Lead Varistor (MOV)

Features Wide operating voltage (V1mA) range from 200V to 1800V(DC) Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping ratio and no following-on current Meets MSL level 1, per J-STD-020 Applicable Transistor, Diode, IC, Thyristor or Triac se

文件：2.23336 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

Radial Lead Varistor (MOV)

Features Wide operating voltage (V1mA) range from 200V to 1800V(DC) Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping ratio and no following-on current Meets MSL level 1, per J-STD-020 Applicable Transistor, Diode, IC, Thyristor or Triac se

文件：2.23336 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

Radial Lead Varistor (MOV)

Features Wide operating voltage (V1mA) range from 200V to 1800V(DC) Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping ratio and no following-on current Meets MSL level 1, per J-STD-020 Applicable Transistor, Diode, IC, Thyristor or Triac se

文件：2.23336 Mbytes 页数：4 Pages

UNSEMI

优恩半导体