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NGTB40N120FL3WG

Marking:40N120FL3;Package:TO-247;IGBT - Ultra Field Stop

ThisInsulatedGateBipolarTransistor(IGBT)featuresarobustand costeffectiveUltraFieldStopTrenchconstruction,andprovides superiorperformanceindemandingswitchingapplications,offering bothlowon−statevoltageandminimalswitchingloss.TheIGBTis wellsuitedforUPSandsol

ONSEMION Semiconductor

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