NGTB40N120FL3WG分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

NGTB40N120FL3WG属于分立半导体产品的晶体管-UGBT、MOSFET-单。由安森美半导体公司制造生产的NGTB40N120FL3WG晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Ultra Field Stop Trench construction, and provides

superior performance in demanding switching applications, offering

both low on−state voltage and minimal switching loss. The IGBT is

well suited for UPS and solar applications. Incorporated into the device

is a soft and fast co−packaged free wheeling diode with a low forward

voltage.

Features

 Extremely Efficient Trench with Field Stop Technology

 TJmax = 175C

 Soft Fast Reverse Recovery Diode

 Optimized for High Speed Switching

 These are Pb−Free Devices

Typical Applications

 Solar Inverter

 Uninterruptible Power Inverter Supplies (UPS)

 Welding