丝印：40R036M2；Package：PG-TO263-7；CoolSiC™ 400V CoolSiC™ G2 MOSFET

Features • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to 18 V • .XT interconnection techn

文件：1.31196 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：40R036M2；Package：PG-HSOF-8；CoolSiC™ 400V CoolSiC™ G2 MOSFET

Features • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to 18 V • .XT interconnection techn

文件：1.26056 Mbytes 页数：15 Pages

Infineon

英飞凌