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FDMA410NZ

丝印:410;Package:MicroFET2X2;Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20 V, 9.5 A, 23 mΩ

Features Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A HBM ESD protection level > 2.5 kV (Note 3) Low Profile-0.8 mm maximum in the new package

文件:612.13 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

ISL54410IRTZ-T

丝印:410;Package:8Ld2x2TDFN;Audio/USB 2.0 Wired-OR Switch with Click and Pop Reduction

文件:680.46 Kbytes 页数:13 Pages

RENESAS

瑞萨

BD41033FJ-C

丝印:41033;Package:SOP-J8;LIN Transceiver for Automotive

General Description BD41033FJ-C is the best transceiver for BUS system which need LIN (Local Interconnect Network) Commander and Responder protocol communication function. Low power consumption in sleep mode is implemented. Features ◼ AEC-Q100 Qualified(Note 1) ◼ Functional Safety Suppor

文件:940.98 Kbytes 页数:19 Pages

ROHM

罗姆

BD41033FJ-CE2

丝印:41033;Package:SOP-J8;LIN Transceiver for Automotive

General Description BD41033FJ-C is the best transceiver for BUS system which need LIN (Local Interconnect Network) Commander and Responder protocol communication function. Low power consumption in sleep mode is implemented. Features ◼ AEC-Q100 Qualified(Note 1) ◼ Functional Safety Suppor

文件:940.98 Kbytes 页数:19 Pages

ROHM

罗姆

FDMA410NZT

丝印:410T;Package:MicroFET2x2;MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m

Description This Single N−Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe. This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package

文件:485.92 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

FDMA410NZT-F130

丝印:410T;Package:MicroFET2x2;MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m

Description This Single N−Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe. This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package

文件:485.92 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

ISL854102FRZ

丝印:4102;Package:12LdDFN;Wide VIN 1.2A Synchronous Buck Regulator

Wide VIN 1.2A Synchronous Buck Regulator The ISL854102 is a 1.2A synchronous buck regulator with an input range of 3V to 40V. It provides an easy to use, high efficiency, low BOM count solution for a variety of applications. Features • Wide input voltage range 3V to 40V • Synchronous operation

文件:1.09994 Mbytes 页数:19 Pages

RENESAS

瑞萨

ISL854102FRZ

丝印:4102;Package:DFN;Wide VIN 1.2A Synchronous Buck Regulator

• Wide input voltage range: 3V to 40V • Synchronous operation for high efficiency • No compensation required • Integrated high-side and low-side NMOS devices • Selectable PFM or forced PWM mode at light loads • Internal fixed frequency (500kHz) or adjustable switching frequency (300kHz to 2M

文件:1.57908 Mbytes 页数:21 Pages

RENESAS

瑞萨

ISL854102FRZ-T

丝印:4102;Package:DFN;Wide VIN 1.2A Synchronous Buck Regulator

• Wide input voltage range: 3V to 40V • Synchronous operation for high efficiency • No compensation required • Integrated high-side and low-side NMOS devices • Selectable PFM or forced PWM mode at light loads • Internal fixed frequency (500kHz) or adjustable switching frequency (300kHz to 2M

文件:1.57908 Mbytes 页数:21 Pages

RENESAS

瑞萨

ISL854102FRZ-T7A

丝印:4102;Package:DFN;Wide VIN 1.2A Synchronous Buck Regulator

• Wide input voltage range: 3V to 40V • Synchronous operation for high efficiency • No compensation required • Integrated high-side and low-side NMOS devices • Selectable PFM or forced PWM mode at light loads • Internal fixed frequency (500kHz) or adjustable switching frequency (300kHz to 2M

文件:1.57908 Mbytes 页数:21 Pages

RENESAS

瑞萨

详细参数

  • 型号:

    410

  • 功能描述:

    MOSFET 20V Single N-Ch 1.5V Specified PowerTrnch

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ON
24+
6-MicroFET
3000
原装正品优势供应支持实单
询价
ON
新年份
QFN
15000
原装现货质量保证,可出样品可开税票
询价
FAIRCHILD/仙童
2404+
QFN
3300
现货正品原装,假一赔十
询价
ONSEMI/安森美
25+
DFN2020-6
20300
ONSEMI/安森美原装特价FDMA410NZ即刻询购立享优惠#长期有货
询价
仙童Fairchild/FSC
25+
QFN6
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ON/安森美
22+
QFN
9000
原装正品
询价
ON/安森美
20+
DFN2020-6
120000
原装正品 可含税交易
询价
FAIRCHILD/仙童
2021+
NA
9000
原装现货,随时欢迎询价
询价
ON/安森美
24+
QFN
16048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
FAIRCHILD/仙童
18+
NA
6000
询价
更多410供应商 更新时间2025-11-10 15:17:00