丝印：40N60M2；Package：TO-220FP；N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 tec

文件：886.43 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：40N60M2；Package：TO-281；N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 tec

文件：886.43 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：40N60M2；Package：TO-3PF；N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 tec

文件：886.43 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：40N60M2；Package：TO-247；N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO-247 long leads package

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thank

文件：350.44 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体