N沟道600 V、0.078 Ohm典型值、34 A MDmesh M2功率MOSFET，TO247长引线封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

丝印：40N60M2；Package：TO-247；N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO-247 long leads package

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thank

文件：350.44 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CHANNEL 600V 34A TO247

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

文件：1.19475 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

文件：1.17801 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=34A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.088Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.32 Kbytes 页数：2 Pages

ISC

无锡固电