丝印：40P06；Package：DFN2X2-6L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE40P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -40V,ID = -6A RDS(ON)

文件：305.65 Kbytes 页数：6 Pages

NCEPOWER

新洁能

P-Channel 60 V (D-S) MOSFET

文件：1.94327 Mbytes 页数：9 Pages

VBSEMI

微碧半导体