isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 88mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.12 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：40N60M2；Package：TO-220FP；N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 tec

文件：886.43 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

文件：1.17801 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.078 Ohm典型值、34 A MDmesh M2功率MOSFET，TO-220FP封装

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics,rendering them suitable for the most demanding high efficie • Extremely low gate charge \n• Excellent output capacitance COSS profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 tec

文件：886.43 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体