丝印：40N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =40A RDS(ON),14mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

文件：1.20806 Mbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：40N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The 40N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =40A RDS(ON),14mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

文件：1.49171 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：40N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =40A RDS(ON),14mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

文件：1.20806 Mbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：40N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The 40N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =40A RDS(ON),14mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

文件：1.49171 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

Fast Switching

文件：68.1 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60-V (D-S) MOSFET

文件：897.86 Kbytes 页数：6 Pages

VBSEMI

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38A竊?0V N-CHANNEL MOSFET

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KIA

可易亚半导体