丝印：40N120FL；Package：TO-247；IGBT

Features • Low Saturation Voltage using NPT Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • 10 s Short Circuit Capability • Low Gate Charge • Soft, Fast Free Wheeling Diode • These are Pb−Free Devices Typical Applications • Solar Inverter • UPS

文件：194.63 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：40N120FL2；Package：TO-247；IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

文件：288.15 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：40N120FL3；Package：TO-247；IGBT - Ultra Field Stop

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and sol

文件：316.44 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

IGBT

Features • Low Saturation Voltage using NPT Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • 10 s Short Circuit Capability • Low Gate Charge • Soft, Fast Free Wheeling Diode • These are Pb−Free Devices Typical Applications • Solar Inverter • UPS

文件：194.63 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

IGBT - Field Stop II

文件：151.57 Kbytes 页数：10 Pages

ONSEMI

安森美半导体