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2SC5191

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum

文件:219.56 Kbytes 页数:9 Pages

RENESAS

瑞萨

2SC5191

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Mini Mold Package EIAJ: SC-59

文件:57.88 Kbytes 页数:12 Pages

NEC

瑞萨

2SC5191

Low Voltage Operation ,Low Phase Distortion

DESCRIPTION • Low Voltage Operation ,Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA APPLICATIONS • Designed for use in low-noise and small s

文件:195.27 Kbytes 页数:14 Pages

ISC

无锡固电

2SC5191-T1

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Mini Mold Package EIAJ: SC-59

文件:57.88 Kbytes 页数:12 Pages

NEC

瑞萨

2SC5191-T1B

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum

文件:219.56 Kbytes 页数:9 Pages

RENESAS

瑞萨

2SC5191-T2

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Mini Mold Package EIAJ: SC-59

文件:57.88 Kbytes 页数:12 Pages

NEC

瑞萨

2SC5192

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Mini Mold Package EIAJ: SC-61

文件:68.3 Kbytes 页数:10 Pages

NEC

瑞萨

2SC5192

SILICON TRANSISTOR

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

文件:222.65 Kbytes 页数:12 Pages

RENESAS

瑞萨

2SC5192R

SILICON TRANSISTOR

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

文件:715.45 Kbytes 页数:12 Pages

RENESAS

瑞萨

2SC5192-T1

SILICON TRANSISTOR

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

文件:222.65 Kbytes 页数:12 Pages

RENESAS

瑞萨

晶体管资料

  • 型号:

    2SC5178(R)

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    表面帖装型 (SMD)_SHF

  • 封装形式:

    贴片封装

  • 极限工作电压:

    5V

  • 最大电流允许值:

    0.01A

  • 最大工作频率:

    10.5GHZ

  • 引脚数:

    4

  • 可代换的型号:

    2SC4993,2SC5078,2SC5097,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    H-17

  • vtest:

    5

  • htest:

    10500000000

  • atest:

    0.01

  • wtest:

    0

供应商型号品牌批号封装库存备注价格
SOT-143
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
TOSHIBA
24+
60000
询价
23+
SOT143
98650
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
TOS
23+
TO
20000
正品原装货价格低
询价
NEC
24+
5000
只做原装公司现货
询价
NEC
1922+
SOT-323
35689
原装进口现货库存专业工厂研究所配单供货
询价
NEC
23+
SOT-323SC-70
50000
全新原装正品现货,支持订货
询价
RENESAS/瑞萨
20+
SOT-323
120000
只做原装 可免费提供样品
询价
NK/南科功率
2025+
SOT-323
986966
国产
询价
RENESAS/瑞萨
2511
SOT-323
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
更多2SC51供应商 更新时间2026-3-10 17:36:00