HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS.

FEATURES: • High Breakdown Voltage : VCEO100V (2SC522) : Vceo= 60V (2SC524) • Useful attachment for Heat sink. • Various Uses for Medium Power : Ic=1.5A (Max.), Pc=10W (Max.)

文件：230.76 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon NPN triple diffusion planar type(For high-speed switching)

Silicon NPN triple diffusion planar type For high-speed switching ■ Features ● High collector to base voltage VCBO ● High collector to emitter VCEO

文件：42.34 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN Epitaxial Transistor

Features • High voltage large current operation. VCEO = 80 V, IC = 300 mA • High fT. fT = 1.4 GHz • Small output capacitance. Cob = 3 pF Application • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switchin

文件：29.42 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司

VHF to UHF Wide-Band Low-Noise Amp Applications???

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : |S21e|2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.

文件：123.56 Kbytes 页数：4 Pages

SANYO

三洋

VHF to UHF Wide-Band Low-Noise Amplifier Applications

NPN Epitaxial Planar Silicon Transistor Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

文件：70.32 Kbytes 页数：6 Pages

SANYO

三洋

RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP

RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

文件：354.42 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

VHF to UHF Wide-Band Low-Noise Amplifi er Applications

NPN Epitaxial Planar Silicon Transistor Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

文件：463.19 Kbytes 页数：8 Pages

SANYO

三洋

RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP

RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

文件：354.42 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

VHF to UHF Wide-Band Low-Noise Amplifi er Applications

NPN Epitaxial Planar Silicon Transistor Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

文件：463.19 Kbytes 页数：8 Pages

SANYO

三洋

VHF to UHF Wide-Band Low-Noise Amplifi er Applications

NPN Epitaxial Planar Silicon Transistor Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

文件：463.19 Kbytes 页数：8 Pages

SANYO

三洋