NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Supper Mini-Mold package

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NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD

文件：278.4 Kbytes 页数：9 Pages

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NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD

文件：278.4 Kbytes 页数：9 Pages

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SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件：1.15205 Mbytes 页数：10 Pages

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NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2= 10.5 dBTYP.@ VCE= 2 V, IC= 7 mA, f = 2 GHz |S21e|2= 9.0 dBTYP.@VCE= 1 V, IC= 5 mA, f = 2 GHz • Ultra Super Mini-Mold package

文件：50.86 Kbytes 页数：8 Pages

NEC

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NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2= 10.5 dBTYP.@ VCE= 2 V, IC= 7 mA, f = 2 GHz |S21e|2= 9.0 dBTYP.@VCE= 1 V, IC= 5 mA, f = 2 GHz • Ultra Super Mini-Mold package

文件：50.86 Kbytes 页数：8 Pages

NEC

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SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件：1.15205 Mbytes 页数：10 Pages

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SILICON TRANSISTOR

NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件：187.63 Kbytes 页数：14 Pages

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SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif

文件：196.62 Kbytes 页数：21 Pages

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NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59

文件：56.08 Kbytes 页数：12 Pages

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