MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Supercompact Mini Mold Package

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SILICON TRANSISTOR

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA Supercom

文件：276.41 Kbytes 页数：12 Pages

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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Supercompact Mini Mold Package

文件：63.99 Kbytes 页数：10 Pages

NEC

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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

FEATURES\n• Low Voltage Operation, Low Phase Distortion\n• Low Noise\n   NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz\n   NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz\n• Large Absolute Maximum Collector Current\n   IC = 100 mA\n• Supercompact Mini Mold Package • Low Voltage Operation, Low Phase Distortion\n• Low Noise\n   NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz\n   NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz\n• Large Absolute Maximum Collector Current\n   IC = 100 mA\n• Supercompact Mini Mold Package ;

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