MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Supercompact Mini Mold Package

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NEC

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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

FEATURES\n• Low Voltage Operation, Low Phase Distortion\n• Low Noise\n   NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz\n   NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz\n• Large Absolute Maximum Collector Current\n   IC = 100 mA\n• Supercompact Mini Mold Package • Low Voltage Operation, Low Phase Distortion\n• Low Noise\n   NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz\n   NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz\n• Large Absolute Maximum Collector Current\n   IC = 100 mA\n• Supercompact Mini Mold Package ;

Renesas

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SOT343

RENESAS

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上传：深圳市正纳电子有限公司

TO-3PN

MOT/仁懋

上传：深圳广友电子有限公司

TO-3P

东芝

上传：深圳市科恒伟业电子有限公司