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2SC5178R-T1

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件:205.16 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SC5178R-T2

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件:205.16 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SC5178-T1

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES • Low current consumption and high gain |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61

文件:82.02 Kbytes 页数:12 Pages

NEC

瑞萨

2SC5178-T1

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件:190.71 Kbytes 页数:14 Pages

RENESAS

瑞萨

2SC5178-T2

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件:190.71 Kbytes 页数:14 Pages

RENESAS

瑞萨

2SC5178-T2

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES • Low current consumption and high gain |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61

文件:82.02 Kbytes 页数:12 Pages

NEC

瑞萨

2SC5179

NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES • Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Small Mini-Mold package EIAJ: SC-70

文件:57.84 Kbytes 页数:12 Pages

NEC

瑞萨

2SC5179

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件:189.1 Kbytes 页数:14 Pages

RENESAS

瑞萨

2SC5179-T1

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件:189.1 Kbytes 页数:14 Pages

RENESAS

瑞萨

2SC5179-T1

NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES • Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Small Mini-Mold package EIAJ: SC-70

文件:57.84 Kbytes 页数:12 Pages

NEC

瑞萨

晶体管资料

  • 型号:

    2SC5178(R)

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    表面帖装型 (SMD)_SHF

  • 封装形式:

    贴片封装

  • 极限工作电压:

    5V

  • 最大电流允许值:

    0.01A

  • 最大工作频率:

    10.5GHZ

  • 引脚数:

    4

  • 可代换的型号:

    2SC4993,2SC5078,2SC5097,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    H-17

  • vtest:

    5

  • htest:

    10500000000

  • atest:

    0.01

  • wtest:

    0

供应商型号品牌批号封装库存备注价格
SOT-143
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
TOSHIBA
24+
60000
询价
23+
SOT143
98650
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
TOS
23+
TO
20000
正品原装货价格低
询价
NEC
24+
5000
只做原装公司现货
询价
NEC
1922+
SOT-323
35689
原装进口现货库存专业工厂研究所配单供货
询价
NEC
23+
SOT-323SC-70
50000
全新原装正品现货,支持订货
询价
RENESAS/瑞萨
20+
SOT-323
120000
只做原装 可免费提供样品
询价
NK/南科功率
2025+
SOT-323
986966
国产
询价
RENESAS/瑞萨
2511
SOT-323
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
更多2SC51供应商 更新时间2026-3-9 17:01:00